lite- o n tech no lo g y co rp o ratio n property of lite-on only features * high current transfer ratio ( ctr : min. 1000% at i f = 1ma, v ce = 2v ) * high input-output isolation voltage ( v iso = 3,750vrms ) * high collector-emitter voltage ( v ceo = 300v ) * mini-flat package : 2.0mm profile : LTV-352T * ul approved ( no. e113898 ) * cul approved ( no. e113898 , 01sc19287 ) * csa approved ( no. 1243207 ) * fimko approved ( no. fi-16420 ) * nemko approved ( no. p01100403 ) * demko approved ( no. 310475-01 ) * semko approved ( no. 0109173 / 01-08 ) * vde approved ( no. 094722 ) * rohs compliance applications * hybrid substrates that require high density mounting. * telephone sets * copiers, facsimiles * interfaces with various power supply circuits, power distribution boards. part no. : LTV-352T page : 1 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only outline dimensions LTV-352T : 5.300.3 7.00 +0.2 -0.7 0.20.05 3.850.3 2.000.2 0.100.1 2.540.25 4.400.2 0.400.1 factory code *2. rank *3 date code *1 pin no. and internal connection diagram 4. collector 3. emitter 2. cathode 1. anode 1 2 4 3 *1. 2-digit date code. *2. factory identification mark shall be marked (z : taiwan, y : thailand, x : china). *3. rank shall be or shall not be marked. part no. : LTV-352T page : 2 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only taping dimensions description symbol dimensions in mm ( inches ) tape wide w 12 0.3 ( .47 ) pitch of sprocket holes p 0 4 0.1 ( .15 ) distance of compartment f p 2 5.5 0.1 ( .217 ) 2 0.1 ( .079 ) distance of compartment to compartment p 1 8 0.1 ( .315 ) part no. : LTV-352T page : 3 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only absolute maximum rating ( ta = 25 c ) parameter symbol rating unit forward current i f 50 ma reverse voltage v r 6 v input power dissipation p 70 mw collector - emitter voltage v ceo 300 v emitter - collector voltage v eco 0.1 v collector current i c 150 ma output collector power dissipation p c 150 mw total power dissipation p tot 170 mw *1 isolation voltage v iso 3,750 vrms operating temperature t opr -55 ~ +100 c storage temperature t stg -55 ~ +150 c *2 soldering temperature t sol 260 c *1. ac for 1 minute, r.h. = 40 ~ 60% isolation voltage shall be measured using the following method. (1) short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) the isolation voltage tester with zero-cross circuit shall be used. (3) the waveform of applied voltage shall be a sine wave. *2. for 10 seconds part no. : LTV-352T page : 4 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only electrical - optical characteristics ( ta = 25 c ) parameter symbol min. typ. max. unit conditions forward voltage v f 1.2 1.4 v i f =10ma reverse current i r 10 m a v r =4v input terminal capacitance c t 30 250 pf v=0, f=1khz collector dark current i ceo 200 na v ce =200v, i f =0 collector-emitter breakdown voltage bv ceo 300 v i c =0.1ma i f =0 output emitter-collector breakdown voltage bv eco 0.1 v i e =10 m a i f =0 collector current i c 10 ma *1 current transfer ratio ctr 1,000 % i f =1ma v ce =2v collector- emitter saturation voltage v ce(sat) 1.2 v i f =20ma i c =100ma isolation resistance r iso 5 10 10 1 10 11 w dc500v 40 ~ 60% r.h. floating capacitance c f 0.6 1 pf v=0, f=1mhz cut-off frequency f c 1 7 khz v ce =2v, i c =20ma r l =100 w , -3db response time (rise) t r 100 300 m s transfer characteristics response time (fall) t f 20 100 m s v cc =2v, i c =20ma r l =100 w *1 ctr i i 100% c f = part no. : LTV-352T page : 5 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only characteristics curves fig.1 forward current vs. fig.2 collector power diss ipation vs. ambient temperature fig.4 forward current vs. forward 0 collector-emitter voltage fig.6 collector current vs. current fig.5 current transfer ratio vs. forward fig.3 collector-emitter saturation voltage vs. forward current c o l l e c t o r p o w e r d i s s i p a t i o n p c ( m w ) c u r r e n t t r a n s f e r r a t i o c t r ( % ) c o l l e c t o r c u r r e n t i c ( m a ) forward current (ma) collector-emitter voltage v (v) ambient temperature ta ( c) ambient temperature ta ( c) 60 0 50 100 150 200 0 0 0.1 0 10 0 0 5 ambient temperature o o voltage 10ma 1.5ma 1ma v ce = 2v 1000 2000 3000 5000 4 32 1 50 40 30 20 10 ic= 5ma 10ma 30ma 50ma 70ma 2 4 5 3 1 4000 3ma i f = 0.5ma 100 1 80 60 40 20 1.5ma ce 7000 6000 1 2 3 4 5 2ma 2.5ma 0.5 1.5 2.5 4.5 3.5 100ma p c (max.) 5ma f o r w a r d c u r r e n t ( m a ) 0.5 1 100 10 1.9 1.3 forward voltage (v) 0.9 0.7 1.1 1.5 1.7 60 c 100 c 80 c o o o o 40 c o 20 c f o r w a r d c u r r e n t i f ( m a ) forward current i f (ma) c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v c e ( s a t ) ( v ) 0 50 25 75 100 125 -55 -55 125 25 0 50 75 100 part no. : LTV-352T page : 6 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only characteristics curves fig.7 relative current transfer ratio vs. ambient temperature fig.8 collector-emitter saturation voltage fig.9 collector dark current vs. temperature fig.10 response time vs. load c e vs. ambient temperature 0 10 1 ambient temperature ta ( c) r e l a t i v e c u r r e n t t r a n s f e r r a t i o ( % ) c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v ( s a t ) ( v ) ambient temperature ta ( c) 100 1.0 1 0.1 1000 o o resistance v o l t a g e g a i n a v ( d b ) -25 0 frequency f (khz) 500 fig.11 frequency response 80 60 40 20 0.8 0.6 0.4 0.2 -5 -10 -15 -20 100 10 1 0.1 v ce = 2v i c = 20ma ta= 25 c r l = 1k 100 10 2 5 10 20 50 100 200 500 r e s p o n s e t i m e ( s ) load resistance r l (k ) v ce = 2v i c = 20ma ta= 25 c test circuit for response time test circuit for frequency response input output input output vcc td tr tf ts 90% 10% output vcc ambient temperature ta ( c) 100 80 60 40 20 o 1 1000 100 c o l l e c t o r d a r k c u r r e n t i c e o ( n a ) t r t f t d t s 20 1.0 100 40 60 80 0.8 0.6 0.4 0.2 1.2 r d r l r l r d i f = 1ma v ce = 2v 10 v ce = 200v i f = 20ma i c = 100ma o o 1.2 part no. : LTV-352T page : 7 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only temperature profile of soldering reflow (1) one time soldering reflow is recommended within the condition of temperature and time profile shown below. part no. : LTV-352T page : 8 of 9 bns-od-c131/a4
lite- o n tech no lo g y co rp o ratio n property of lite-on only temperature profile of soldering reflow (2) when using another soldering method such as infrated ray lamp, the temperature may ris e partially in the mold of the device. keep the temperature on the package of the device within the condition of above (1) recommended foot print patterns (mount pad) unit : mm part no. : LTV-352T page : 9 of 9 bns-od-c131/a4
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